The information for figures in paper (Proton radiation effect on InAs avalanche photodiodes):
Fig. 1. (a) Structure of the InAs APD wafer and (b) top view of mesa InAs APDs.
Fig. 2. (a) Mean I-V with standard deviations, and (b) mean M(V) with standard deviations at 300 and 200 K of 200 µm diameter InAs APDs, prior to proton irradiation.
Fig. 3. Mean I-V characteristics at 300 (top row) and 200 K (bottom row) of the 200 µm diameter APDs from the proton-irradiated dies, along with the corresponding reference data (with standard deviations). Proton energies were 10.0 (left), 31.4 (middle), and 58.8 (right) MeV.
Fig. 4. (a) Id at -0.2 and -10 V versus fluence for all irradiated dies, and (b) change in Id at -0.2 and -10 V versus fluence for dies irradiated with 10.0 MeV protons. All data are for 200 µm diameter APDs at 200 K.
Fig. 5. Responsivity at -0.2 V of the dies at (a) 300 and (b) 200 K, compared to the reference values (with standard deviations).
Fig. 6. Avalanche gain versus reverse bias of all dies at (a) 300 and (b) 200 K, compared to the reference values (with standard deviations).
Fig. 7. An InAs sample irradiated with the same condition as Die #4, showing (a) dislocation loops within the p-doped layer in a bright field TEM image, and (b) a Moire fringe area (rectangle) and a dislocation loop (ellipse) in a HREM image.